? semiconductor components industries, llc, 2009 october, 2009 ? rev. 8 1 publication order number: umc2nt1/d umc2nt1g, UMC3NT1g, umc5nt1g preferred devices dual common base-collector bias resistor transistors npn and pnp silicon surface mount transistors with monolithic bias resistor network the bias resistor transistor (brt) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base ? emitter resistor. these digital transistors are designed to replace a single device and its external resistor bias network. the brt eliminates these individual components by integrating them into a single device. in the umc2nt1g series, two complementary brt devices are housed in the sot ? 353 package which is ideal for low power surface mount applications where board space is at a premium. features ? simplifies circuit design ? reduces board space ? reduces component count ? available in 8 mm, 7 inch/3000 unit tape and reel ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings (t a = 25 c unless otherwise noted, common for q 1 and q 2 , ? minus sign for q 1 (pnp) omitted) rating symbol value unit collector-base voltage v cbo 50 vdc collector-emitter voltage v ceo 50 vdc collector current i c 100 madc stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. thermal characteristics thermal resistance ? junction-to-ambient (surface mounted) r ja 833 c/w operating and storage temperature range t j , t stg ? 65 to +150 c total package dissipation @ t a = 25 c (note 1) p d * 150 mw 1. device mounted on a fr-4 glass e poxy printed circuit board using the minimum recommended footprint. sc ? 88a/sot ? 353 case 419a style 6 ux = device marking x = 2, 3 or 5 m = date code = pb ? free package marking diagram 13 2 54 preferred devices are recommended choices for future use and best overall value. 45 q1 q2 r1 r1 r2 r2 31 2 see detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. ordering information http://onsemi.com ux m (note: microdot may be in either location)
umc2nt1g, UMC3NT1g, umc5nt1g http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit q1 transistor: pnp off characteristics collector-base cutoff current (v cb = 50 v, i e = 0) i cbo ? ? 100 nadc collector-emitter cutoff current (v cb = 50 v, i b = 0) i ceo ? ? 500 nadc emitter-base cutoff current umc2nt1g (v eb = 6.0, i c = 0 ma) UMC3NT1g umc5nt1g / t2g i ebo ? ? ? ? ? ? 0.2 0.5 1.0 madc on characteristics collector-base breakdown voltage (i c = 10 a, i e = 0) v (br)cbo 50 ? ? vdc collector-emitter breakdown voltage (i c = 2.0 ma, i b = 0) v (br)ceo 50 ? ? vdc dc current gain umc2nt1g (v ce = 10 v, i c = 5.0 ma) UMC3NT1g umc5nt1g / t2g h fe 60 35 20 100 60 35 ? ? ? collector ? emitter saturation voltage (i c = 10 ma, i b = 0.3 ma) v ce(sat) ? ? 0.25 vdc output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k ) v ol ? ? 0.2 vdc output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k ) v oh 4.9 ? ? vdc input resistor umc2nt1g UMC3NT1g umc5nt1g / t2g r1 15.4 7.0 3.3 22 10 4.7 28.6 13 6.1 k resistor ratio umc2nt1g UMC3NT1g umc5nt1g / t2g r1/r2 0.8 0.8 0.38 1.0 1.0 0.47 1.2 1.2 0.56 q2 transistor: npn off characteristics collector-base cutoff current (v cb = 50 v, i e = 0) i cbo ? ? 100 nadc collector-emitter cutoff current (v cb = 50 v, i b = 0) i ceo ? ? 500 nadc emitter-base cutoff current umc2nt1g (v eb = 6.0, i c = 0 ma) UMC3NT1g umc5nt1g / t2g i ebo ? ? ? ? ? ? 0.2 0.5 0.1 madc on characteristics collector-base breakdown voltage (i c = 10 a, i e = 0) v (br)cbo 50 ? ? vdc collector-emitter breakdown voltage (i c = 2.0 ma, i b = 0) v (br)ceo 50 ? ? vdc dc current gain umc2nt1g (v ce = 10 v, i c = 5.0 ma) UMC3NT1g umc5nt1g / t2g h fe 60 35 80 100 60 140 ? ? ? collector ? emitter saturation voltage (i c = 10 ma, i b = 0.3 ma) v ce(sat) ? ? 0.25 vdc output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k ) v ol ? ? 0.2 vdc output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k ) v oh 4.9 ? ? vdc input resistor umc2nt1g UMC3NT1g umc5nt1g / t2g r1 15.4 7.0 33 22 10 47 28.6 13 61 k resistor ratio umc2nt1g UMC3NT1g umc5nt1g / t2g r1/r2 0.8 0.8 0.8 1.0 1.0 1.0 1.2 1.2 1.2
umc2nt1g, UMC3NT1g, umc5nt1g http://onsemi.com 3 ordering information device package shipping ? umc2nt1g sc ? 88a/sot ? 353 (pb ? free) 3000 / tape & reel UMC3NT1g sc ? 88a/sot ? 353 (pb ? free) 3000 / tape & reel umc3nt2g sc ? 88a/sot ? 353 (pb ? free) 3000 / tape & reel umc5nt1g sc ? 88a/sot ? 353 (pb ? free) 3000 / tape & reel umc5nt2g sc ? 88a/sot ? 353 (pb ? free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. device marking and resistor values device marking transistor 1 ? pnp transistor 2 ? npn r1 (k) r2 (k) r1 (k) r2 (k) umc2nt1g UMC3NT1g umc3nt2g umc5nt1g umc5nt2g u2 u3 u3 u5 u5 22 10 10 4.7 4.7 22 10 10 10 10 22 10 10 47 47 22 10 10 47 47 figure 1. derating curve 250 200 150 100 50 0 -50 0 50 100 150 t a , ambient temperature ( c) p d , power dissipation (milliwatts) r ja = 833 c/w
umc2nt1g, UMC3NT1g, umc5nt1g http://onsemi.com 4 typical electrical characteristics ? umc2nt1g pnp transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain figure 2. v ce(sat) versus i c figure 3. dc current gain 1000 10 i c , collector current (ma) 100 10 1 100 figure 4. output capacitance i c , collector current (ma) 0 10 20 30 v o = 0.2 v t a =-25 c 75 c 100 10 1 0.1 40 50 figure 5. output current versus input voltage 100 10 1 0.1 0.01 0.001 0 1 2 3 4 v in , input voltage (v) 5 6 7 8 9 10 figure 6. input voltage versus output current 0.01 v ce(sat) , maximum collector voltage (volts) 0.1 1 10 40 i c , collector current (ma) 0 20 50 75 c 25 c t a =-25 c 50 010203040 4 3 2 1 0 v r , reverse bias voltage (v) c ob , capacitance (pf) 25 c i c /i b = 10 25 c -25 c v ce = 10 v t a =75 c f = 1 mhz l e = 0 ma t a = 25 c 75 c 25 c t a =-25 c v o = 5 v
umc2nt1g, UMC3NT1g, umc5nt1g http://onsemi.com 5 typical electrical characteristics ? umc2nt1g npn transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain figure 7. v ce(sat) versus i c 10 02030 i c , collector current (ma) 10 1 0.1 t a =-25 c 75 c 25 c 40 50 figure 8. dc current gain figure 9. output capacitance 1 0.1 0.01 0.001 020 40 50 i c , collector current (ma) v ce(sat) , maximum collector voltage (volts) 1000 100 10 1 10 100 i c , collector current (ma) t a =75 c 25 c -25 c t a =-25 c 25 c figure 10. output current versus input voltage 75 c 25 c t a =-25 c 100 10 1 0.1 0.01 0.001 01 234 v in , input voltage (v) 56 78 910 figure 11. input voltage versus output current 50 010203040 4 3 1 2 0 v r , reverse bias voltage (v) c ob , capacitance (pf) 75 c v ce = 10 v f = 1 mhz i e = 0 ma t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10
umc2nt1g, UMC3NT1g, umc5nt1g http://onsemi.com 6 typical electrical characteristics ? UMC3NT1g pnp transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain figure 12. v ce(sat) versus i c 100 10 1 0.1 0.01 0.001 0 v in , input voltage (v) t a =-25 c 25 c 1 2 3 4 5 6 7 8 9 10 figure 13. dc current gain figure 14. output capacitance figure 15. output current versus input voltage figure 16. input voltage versus output current 0.01 20 i c , collector current (ma) v ce(sat) , maximum collector voltage (volts) 0.1 1 0 40 50 1000 1 10 100 i c , collector current (ma) t a =75 c -25 c 100 10 0 i c , collector current (ma) 0.1 1 10 100 10 20 30 40 50 t a =-25 c 25 c 75 c 75 c i c /i b = 10 50 010 203040 4 3 1 2 v r , reverse bias voltage (v) c ob , capacitance (pf) 0 t a =-25 c 25 c 75 c 25 c v ce = 10 v f = 1 mhz l e = 0 ma t a = 25 c v o = 5 v v o = 0.2 v
umc2nt1g, UMC3NT1g, umc5nt1g http://onsemi.com 7 typical electrical characteristics ? UMC3NT1g npn transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain figure 17. v ce(sat) versus i c figure 18. dc current gain figure 19. output capacitance figure 20. output current versus input voltage 1000 10 i c , collector current (ma) t a =75 c 25 c -25 c 100 10 1 100 75 c 25 c 100 0 v in , input voltage (v) 10 1 0.1 0.01 0.001 246810 t a =-25 c 0 i c , collector current (ma) 100 t a =-25 c 75 c 10 1 0.1 10 20 30 40 50 25 c figure 21. input voltage versus output current 0.001 v ce(sat) , maximum collector voltage (volts) t a =-25 c 75 c 25 c 0.01 0.1 1 40 i c , collector current (ma) 0 20 50 50 0 10 203040 4 3 2 1 0 v r , reverse bias voltage (v) c ob , capacitance (pf) i c /i b = 10 v ce = 10 v f = 1 mhz i e = 0 ma t a = 25 c v o = 5 v v o = 0.2 v
umc2nt1g, UMC3NT1g, umc5nt1g http://onsemi.com 8 typical electrical characteristics ? umc5nt1g pnp transistor 25 c i c , collector current (ma) h fe , dc current gain figure 22. v ce(sat) versus i c figure 23. dc current gain figure 24. output capacitance figure 25. output current versus input voltage 1000 10 i c , collector current (ma) t a =75 c 25 c -25 c 100 1 1 1000 75 c 25 c 100 0 v in , input voltage (v) 10 1 0.1 0.01 2468 12 t a =-25 c v ce(sat) , maximum collector voltage (volts) t a =75 c -25 c 0.01 0.1 1 40 i c , collector current (ma) 0 20 50 010203040 12 6 4 2 0 v r , reverse bias voltage (v) c ob , capacitance (pf) i c /i b = 10 v ce = 10 v f = 1 mhz i e = 0 ma t a = 25 c v o = 5 v 30 10 60 100 10 10 8 15 25 35 45 5 series 1 10
umc2nt1g, UMC3NT1g, umc5nt1g http://onsemi.com 9 typical electrical characteristics ? umc5nt1g npn transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain figure 26. v ce(sat) versus i c 0246810 100 10 1 0.1 0.01 0.001 v in , input voltage (v) t a =-25 c 75 c 25 c figure 27. dc current gain figure 28. output capacitance 100 10 1 0.1 010 20 3040 50 i c , collector current (ma) figure 29. output current versus input voltage 1000 10 i c , collector current (ma) t a =75 c 25 c -25 c 100 10 1 100 25 c 75 c 50 010203040 1 0.8 0.6 0.4 0.2 0 v r , reverse bias voltage (v) c ob , capacitance (pf) figure 30. input voltage versus output current 0 20 40 50 10 1 0.1 0.01 i c , collector current (ma) 25 c 75 c v ce(sat) , maximum collector voltage (volts) v ce = 10 v f = 1 mhz i e = 0 ma t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 t a =-25 c t a =-25 c
umc2nt1g, UMC3NT1g, umc5nt1g http://onsemi.com 10 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419a ? 01 obsolete. new standard 419a ? 02. 4. dimensions a and b do not include mold flash, protrusions, or gate burrs. dim a min max min max millimeters 1.80 2.20 0.071 0.087 inches b 1.15 1.35 0.045 0.053 c 0.80 1.10 0.031 0.043 d 0.10 0.30 0.004 0.012 g 0.65 bsc 0.026 bsc h --- 0.10 --- 0.004 j 0.10 0.25 0.004 0.010 k 0.10 0.30 0.004 0.012 n 0.20 ref 0.008 ref s 2.00 2.20 0.079 0.087 b 0.2 (0.008) mm 12 3 4 5 a g s d 5 pl h c n j k ? b ? sc ? 88a, sot ? 353, sc ? 70 case 419a ? 02 issue j *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 style 6: pin 1. emitter 2 2. base 2 3. emitter 1 4. collector 5. collector 2/base 1 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does n ot convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended f or surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in a ny manner. umc2nt1/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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